2007. 5. 21 1/2 semiconductor technical data TIP112F epitaxial planar npn transistor revision no : 0 monolithic construction with built in base-emitter shunt resistors industrial use. features high dc current gain. : h fe =1000(min.), v ce =4v, i c =1a. low collector-emitter saturation voltage. complementary to tip117f. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current dc i c 2 a pulse i cp 4 base current dc i b 50 ma collector power dissipation ta=25 p c 2 w tc=25 20 junction temperature t j 150 storage temperature range t stg -65 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i ceo v ce =50v, i b =0 - - 2 ma i cbo v cb =100v, i e =0 - - 1 emitter cut-off current i ebo v eb =5v, i c =0 - - 2 ma dc current gain h fe v ce =4v, i c =1a 1000 - - v ce =4v, i c =2a 500 - - collector-emitter sustaining voltage v ceo(sus) i c =30ma, i b =0 100 - - v collector-emitter saturation voltage v ce(sat) i c =2a, i b =8ma - - 2.5 v base-emitter on voltage v be(on) v ce =4v, i c =2a - - 2.8 v collector output capacitance c ob v cb =10v, i e =0, f=0.1mhz - - 100 pf c b e r 10k ? 0.6k ? r 1 2 = = equivalent circuit
2007. 5. 21 2/2 TIP112F revision no : 0 d power dissipation p (w) 0 0 case temperature ta ( c) d p - ta h - i c collector current i (a) 0.01 100k fe 10 dc current gain h fe c 0.1 1 10 30 100 300 10k 30k 50 100 150 200 5 10 15 20 25 30 v =4v ce 10 0.01 0.1 0.3 1 3 30 100 0.1 1 10 i /i =500 c 1 cb collector-base voltage v (v) c - v capacitance c (pf) cb 0.01 saturation voltage be(sat) collector current i (a) c ce(sat) be(sat) v , v - i ob ob 0.1 1 10 100 3 5 10 30 50 100 300 500 1k f=0.1mhz c v ,v (v) ce(sat) i - v c ce ce collector-emitter voltage v (v) 0 1 c 0.4 collector current i (a) collector current i (a) c 0.1 5 1 collector-emitter voltage v (v) ce safe operating area 23 45 i =150 a b 3103050100 0.3 0.5 1 3 5 10 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c dc operation 1m s 0.8 1.2 1.6 2.0 200 a 250 a 300 a 400 a 450 a 500 a 350 a be(sat) v ce(sat) v b 5ms tc=25 c
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